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| NPN SILICON PLANAR RF TRANSISTOR ISSUE 4 FEB 94 FEATURES * High fT=650MHz min * Max. capacitance 0.7pF * Low noise <5dB at 500MHz APPLICATIONS * Keyless entry systems * Wideband instrumentation amplifiers * Telemetry * Wireless lans MPSH10P C E B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg 30 25 3 25 500 E-Line TO92 Compatible VALUE UNIT V V V mA mW C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector Base Capacitance Collector Base Time Constant Common-Base Feedback capacitance Noise Figure SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(on) hFE fT Ccb rbCc Crb Nf 60 650 0.7 9 0.65 5 MHz pF ps pF dB MIN. 30 25 3 100 100 0.5 0.95 MAX. UNIT V V V nA nA V V CONDITIONS. IC=100A, IE=0 IC=1mA, IB=0* IE=10A, IC=0 VCB=25V, IE=0 VEB=2V,IC=0 IC=4mA, IB=0.4mA IC=4mA, VCE=10V IC=4mA, VCE=10V* IC=4mA, VCE=10V f=100MHz VCB=10V, IE=0, f=1MHz VCB=10V, IC=4mA, f=31.8MHz VCB=10V, IE=0, f=1MHz IC=2mA, VCE=5V, RS=50, f=500MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-88 MPSH10P TYPICAL CHARACTERISTICS 200 175C 0.8 150 VCE=-10V 1.0 VCE=-10V -55C VBE - (Volts) hFE -Gain 100C 100 25C 0.6 25C 100C 0.4 175C 0.2 50 -55C 0 0.1 1 10 100 0 0.1 1 10 100 IC - (mA) IC - (mA) hFE v IC VBE(on) v IC 1500 VCE=10V f=100MHz 1.2 1.0 fT - (MHz) 1000 0.8 CCB - (pF) 0.1 1 10 100 0.6 0.4 0.2 500 0 0 0.1 1 10 30 IC - (mA) VCB - (Volts) fT v IC CCB v VCB 3-89 |
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